Physical Vapor Deposition (PVD) processes use a physical process energy to evaporate solid source material and eject it towards a substrate, where it condenses. High vacuum is often preferred in PVD to provide ions a long mean free path and sufficient kinetic energy.

This device is used for sputtering and pulsed cathodic-arc deposition of thin films in a vacuum chamber. Substrate type can vary, but is most commonly a silicon wafer.

• Instruments are water-cooled
• Argon, oxygen and nitrogen gas insertion possible
• Carbon and metal films possible with own source assemblies in cathodic-arc deposition